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| MITSUBISHI TRANSISTOR MODULES QM30TB-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM30TB-2HB * * * * * IC Collector current .......................... 30A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 127 7.5 21 7.5 21 7.5 16.5 19 BuP P 28.5 EuP BvP 28.5 EvP BwP 21.5 EwP 2-5.5 P BuP BvP EvP U BuN EuN N BvN EvN V BwN EwN BwP EwP W 25 18 40 U N BuN EuN BvN V W EvN BwN EwN 98 110 Tab#110, t=0.5 Tab#250, t=0.8 26.5 LABEL 17.5 25.6 56 EuP Note: All Transistor Units are 4-Stage Darlingtons. Feb.1999 MITSUBISHI TRANSISTOR MODULES QM30TB-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso -- -- Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage Mounting torque Weight (Tj=25C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 1000 1000 1000 7 30 30 310 2 300 -40~+150 -40~+125 Charged part to case, AC for 1 minute Mounting screw M5 Typical value 2500 1.47~1.96 15~20 500 Unit V V V V A A W A A C C V N*m kg*cm g ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25C, unless otherwise noted) Limits Test conditions VCE=1000V, VEB=2V VCB=1000V, Emitter open VEB=7V IC=30A, IB=40mA -IC=30A (diode forward voltage) IC=30A, VCE=4V Min. -- -- -- -- -- -- 750 -- VCC=600V, IC=30A, IB1=60mA, -IB2=0.6A -- -- Transistor part (per 1/6 module) Diode part (per 1/6 module) Conductive grease applied (per 1/6 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 2.0 50 4.0 4.0 1.8 -- 2.5 15 3.0 0.4 1.5 0.25 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM30TB-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 50 m 200 A mA DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 10 4 7 5 4 3 2 10 3 7 5 4 3 2 10 2 10 0 Tj=25C Tj=125C COLLECTOR CURRENT IC (A) Tj=25C 40 IB= VCE=10V 30 IB=1 5mA 20 IB=10mA DC CURRENT GAIN hFE 100 A IB= 40m IB= VCE=4V 10 0 0 1 2 3 4 5 2 3 4 5 7 10 1 2 3 4 5 7 10 2 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 0 7 5 4 3 2 10 -1 7 5 4 3 2 10 -2 2.6 3.0 3.4 3.8 4.2 4.6 VCE=4.0V Tj=25C SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 101 7 5 4 3 2 10 0 7 5 4 3 2 10-1 10 0 BASE CURRENT IB (A) VBE(sat) SATURATION VOLTAGE VCE(sat) IB=40mA Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 3 VCC=600V 2 IB1=60mA -IB2=0.6A 10 1 7 5 4 3 2 10 0 7 5 4 3 10 0 Tj=25C Tj=125C ton, ts, tf (s) 4 IC=40A ts tf 3 IC=30A IC=10A 2 SWITCHING TIME ton 1 Tj=25C Tj=125C 0 10 -3 2 3 4 5 710 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 BASE CURRENT IB (A) COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM30TB-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 3 REVERSE BIAS SAFE OPERATING AREA 80 SWITCHING TIME 10 1 7 5 4 3 2 10 0 7 5 4 3 3 4 5 7 10 0 COLLECTOR CURRENT IC (A) 2 ts, tf (s) 70 60 50 40 30 20 10 0 0 Tj=125C IB2=-2.5A ts tf VCC=600V IC=30A IB1=60mA Tj=25C Tj=125C 2 3 4 5 7 10 1 23 200 400 600 800 1000 BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD BIAS SAFE OPERATING AREA 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 TC=25C 2 NON-REPETITIVE 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 100 1m DERATING FACTOR OF F. B. S. O. A. 50S 500 COLLECTOR CURRENT IC (A) 90 DERATING FACTOR (%) DC S 100S 80 70 60 50 40 30 20 10 0 0 20 40 60 COLLECTOR DISSIPATION SECOND BREAKDOWN AREA COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR REVERSE CURRENT -IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 45 7 10 1 2 3 4 5 0.5 0.4 S 80 100 120 140 160 CASE TEMPERATURE TC (C) Zth (j-c) (C/ W) 10 7 5 4 3 2 10 1 7 5 4 3 2 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 2 0.3 0.2 0.1 0 10 -3 2 3 4 5 7 10 -22 3 4 5 710 -1 2 3 4 5 7 10 0 Tj=25C Tj=125C 0.8 1.2 1.6 2.0 2.4 10 0 0.4 TIME (s) COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM30TB-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 500 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 2 7 5 3 2 10 2 VCC=600V IB1=60mA -IB2=0.6A Irr 10 1 400 200 100 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 10 0 Qrr 10 0 7 5 3 trr Tj=25C 2 Tj=125C -1 10 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A) 2.0 1.6 TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 710 1 2 3 4 5 7 Zth (j-c) (C/ W) 1.2 0.8 0.4 0 10 -3 2 3 4 5 7 10 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 TIME (s) Feb.1999 trr (s) 300 Irr (A), Qrr (c) 10 1 7 5 3 2 |
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